EE2203 ELECTRONIC DEVICES AND CIRCUITS Syllabus

EE2203 ELECTRONIC DEVICES AND CIRCUITS

AIM

To study the characteristics and applications of electronic devices.

OBJECTIVES

To acquaint the students with construction, theory and characteristics of the following electronic devices:

i) p-n junction diode

ii) Bipolar transistor

iii) Field effect transistor

iv) LED, LCD and other photo electronic devices

v) Power control / regulator devices

UNIT I PN DIODE AND ITS APPLICATIONS

PH junction diode-VI characteristics – Rd, temperature effects – Drift ad diffusion currents – switching – Rectifiers: HWR, FWR, BR, filters-Zener diode – VI characteristics, Regulators (series and shunt), LED, LCD characteristics and applications.

UNIT II BJT AND ITS APPLICATIONS

Junction transistor – Transistor construction – Input and output characteristics – CE, CB and CC configurations – hybrid model – Analytical expressions switching – RF application – Power transistors – Opto couplers.

UNIT III FET AND ITS APPLICATIONS

FET – VI characteristics, VP, JFET – small signal model – LF and HF equivalent circuits – CS and CD amplifiers –cascade and cascade – Darlington connection – MOSFET - Characteristics – enhancement and depletion.

UNIT IV AMPLIFIERS AND OSCILLATORS

Differential amplifiers: CM and DM – condition for ofc-feedback amplifiers – stability – Voltage / current, series / shunt feedback – oscillators – LC, RC, crystal

UNIT V PULSE CIRCUITS

RC wave shaping circuits – Diode clampers and clippers – Multivibrators – Schmitt triggers – UJT based saw tooth oscillators

TEXT BOOKS:

1. Paynter, “Introductory electronic devices and circuits, 2006, PHI

2. David Bell “Electronic Devices and Circuits” 2007, PHI

REFERENCES:

1. Theodre F.Boghert, “Electronic Devices & Circuits” Pearson Education, VI Edition, 2003

2. Rashid, “Microelectronic circuits” Thomson Publication, 1999

3. B.P.Singh & Rekha Sing, “Electronic Devices and Integrated Circuits” Pearson Education, 2006.